IRLR3114ZPBF International Rectifier, IRLR3114ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR3114ZPBF
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3114ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3810pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01 Ω
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
600
500
400
300
200
100
3.0
2.5
2.0
1.5
1.0
0.5
0
-75 -50 -25 0
25
Fig 12c. Maximum Avalanche Energy
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
50
T J , Temperature ( °C )
vs. Drain Current
75
25 50 75 100 125 150 175 200
100
TOP
BOTTOM 42A
125
www.irf.com
150
I D
9.7A
17A
175