IRFZ48NSPBF International Rectifier, IRFZ48NSPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ48NSPBF
• Description: MOSFET N-CH 55V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ48NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 1970pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 64 A
• Gate Charge, Total: 81 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 130 W
• Resistance, Drain To Source On: 14 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 34 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 24 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ48NSPBF


IRFZ48NS/LPbF
Electrical Characteristics @ T
ƒ
Notes:
‚
Source-Drain Ratings and Characteristics
I
V
∆V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
E
I
I
V
t
Q
t
L
DSS
GSS
d(on)
d(off)
f
r
S
on
SM
rr
fs
S
(BR)DSS
GS(th)
AS
DS(on)
iss
oss
SD
g
gs
gd
rss
Repetitive rating; pulse width limited by
rr
I
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
2
Starting T
SD
J
G
≤ 175°C
≤ 32A di/d ≤ 220A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.37mH
AS
= 32A. (See Figure 12)
Parameter

Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
„
…
†
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is the destructive value not limited to the thermal limit.
This is the thermal limited value.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 700… 190†
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
55
24
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.058 –––
1970 –––
120
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
470
7.5
–––
–––
–––
220
12
78
34
50
68
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
100
330
4.0
1.3
14
25
81
19
30
210
64
V/°C
mΩ
mJ
µA
nA
nC
ns
nH
pF
nC
ns
V
V
S
V
ƒ = 1.0MHz, See Fig. 5
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
and center of die contact
V
V
I
di/dt = 100A/µs
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
J
J
= 32A
= 32A
= 25°C, I
= 25°C, I
= 32A, L = 0.37mH
= 0.85Ω
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 0V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
GS
, I
D
S
F
D
D
D
= 250µA
GS
GS
Conditions
= 32A, V
= 32A
= 250µA
Conditions
= 32A „
= 32A„
„
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
„
S
+L
D
D
S
)