IRF6715MTRPBF International Rectifier, IRF6715MTRPBF Datasheet - Page 7

MOSFET N-CH 25V 34A DIRECTFET

IRF6715MTRPBF

Manufacturer Part Number
IRF6715MTRPBF
Description
MOSFET N-CH 25V 34A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6715MTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 4.5V
Input Capacitance (ciss) @ Vds
5340pF @ 13V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
180 A
Power Dissipation
78 W
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
IR
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Part Number:
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Manufacturer:
IR
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Part Number:
IRF6715MTRPBF
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
+
-
D.U.T
Fig 18.
ƒ
+
-
SD
D
D
-
G
G
+
S
S
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
D = DRAIN
G = GATE
S = SOURCE
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
for HEXFET
P.W.
D
D
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
®
Diode Recovery
Current
Power MOSFETs
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7

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