IRFIB41N15DPBF International Rectifier, IRFIB41N15DPBF Datasheet - Page 6

• Manufacturer Part Number: IRFIB41N15DPBF
• Description: MOSFET N-CH 150V 41A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIB41N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2520pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIB41N15DPBF

IRFB/IRFIB/IRFS/IRFSL41N15DPbF
Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
AS
Q
R G
20V
GS
V
V DS
GS
t p
I AS
Charge
Q
Q
D.U.T
GD
G
t p
0.01 Ω
L
15V
V
(BR)DSS
DRIVER
+
-
V DD
A
1200
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
12V
V
50
GS
Same Type as D.U.T.
Current Regulator
J
.2µF
Vs. Drain Current
75
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
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D.U.T.
I
D
150
°
+
I D
-
10A
21A
25A
V
DS
175