IXTA110N055T7 IXYS, IXTA110N055T7 Datasheet

MOSFET N-CH 55V 110A TO-263-7

IXTA110N055T7

Manufacturer Part Number
IXTA110N055T7
Description
MOSFET N-CH 55V 110A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA110N055T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
110 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
3080
Qg, Typ, (nc)
67
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
DM
D25
AR
GSS
DSS
L
SOLD
DGR
AS
D
J
JM
stg
GS(th)
DSS
GSM
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
GS
J
J
J
DS
GS
DS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
D
= 250 µA
= 100 µA
G
= 25 A, Note 1
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
J
≤ V
= 150° C
IXTA110N055T7
DSS
JM
Min.
2.0
55
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
5.5
± 20
110
300
750
230
300
260
175
55
55
25
± 200
3
3
250
Max.
4.0
7.0
2
V/ns
m Ω
mJ
nA
°C
°C
°C
°C
°C
µA
µA
W
V
V
V
A
A
A
g
V
V
TO-263 (7-lead) (IXTA..7)
Features
Advantages
Applications
Pin-out:1 - Gate
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
Applications
DSS
DS(on)
1
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
7
=
= 110
≤ ≤ ≤ ≤ ≤
7.0 mΩ Ω Ω Ω Ω
55
DS99680 (11/06)
(TAB)
A
V

Related parts for IXTA110N055T7

IXTA110N055T7 Summary of contents

Page 1

... ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA110N055T7 Maximum Ratings MΩ ± 20 110 300 JM 25 750 ≤ DSS 230 -55 ... +175 175 -55 ... +175 300 260 Characteristic Values Min. Typ. 55 2.0 ± 200 T = 150° ...

Page 2

... DSS 17.5 DSS D 15 Characteristic Values Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA110N055T7 TO-263 (7-lead) (IXTA...7) Outline Max Pins Gate Source 4 - Drain 0.65 °C/W 5,6,7 - Source Tab (8) - Drain Max. 110 A 300 A 1 6,404,065 B1 ...

Page 3

... IXYS CORPORATION All rights reserved 0.5 0.6 0.7 0 1.2 1.4 1.6 = 55A Value 175º 25ºC J 200 240 280 320 IXTA110N055T7 Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 250 8V 200 7V 150 6V 100 Volts DS Fig Normalized to I DS(on) vs ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5.5 6 6.5 7 1.2 1.4 1.6 1.8 1.00 C iss 0.10 C oss C rss 0. IXTA110N055T7 Fig. 8. Transconductance 40º 25º 150º 100 I - Amperes D Fig. 10. Gate Charge 27. ...

Page 5

... I = 20A D 25.5 24.0 23.0 23.5 20.5 18.0 23.0 120 55 110 d(off) 52 Ω 10V GS 100 = 27.5V 50.0 47.5 45.0 42.5 40.0 37.5 35 IXTA110N055T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 27. Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature ...

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