IRF640NSPBF International Rectifier, IRF640NSPBF Datasheet - Page 3

• Manufacturer Part Number: IRF640NSPBF
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Current, Drain: 18 A
• Gate Charge, Total: 67 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.15 Ohm
• Resistance, Thermal, Junction To Case: 1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 6.8 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF640NSPBF

Dimensions are shown in millimeters (inches)
2
2
T H IS IS AN IR F 5 3 0 S W IT H
OR
L O T CO D E 8 0 2 4
AS S E M B L E D O N W W 0 2 , 2 0 0 0
IN T H E AS S E M B L Y L IN E "L "
po s i tion in dicates "L ead-F r ee"
N ote: "P " in as s em bly lin e
IN T E R N AT IO N AL
R E C T IF IE R
AS S E M B L Y
L O T C O D E
L O GO
F 5 3 0 S
IN T E R N AT IO N AL
R E CT IF IE R
AS S E M B L Y
L O T CO D E
L O GO
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
Y E AR 0 = 2 0 0 0
W E E K 0 2
A = AS S E M B L Y S IT E CO D E
P AR T N U M B E R
IRF640NPbF/SPbF/LPbF
P R O D U C T (O P T IO N AL )
F 5 3 0 S
D AT E CO D E
Y E AR 0 = 2 0 0 0
W E E K 0 2
L IN E L
P AR T N U M B E R
9