IRFB4020PBF International Rectifier, IRFB4020PBF Datasheet

IRFB4020PBF

Manufacturer Part Number

IRFB4020PBF

Description

MOSFET N-CH 200V 18A TO-220AB

Manufacturer

International Rectifier

Datasheet

1.IRFB4020PBF.pdf (8 pages)

Specifications of IRFB4020PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 11A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

4.9V @ 100µA

Gate Charge (qg) @ Vgs

29nC @ 10V

Input Capacitance (ciss) @ Vds

1200pF @ 50V

Power - Max

100W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N Channel

Continuous Drain Current Id

18A

Drain Source Voltage Vds

200V

On Resistance Rds(on)

100mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

4.9V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

IRFB4020PBF

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB4020PBF

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB4020PBF

Company:

H&T Electronics

Part Number:

IRFB4020PBF

Quantity:

10 000

Current page: 1 of 8
Download datasheet (642Kb)

Features

• Key parameters optimized for Class-D audio

• Low R

• Low Q

• 175°C operating junction temperature for

• Can deliver up to 300W per channel into 8Ω load in

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

Notes through … are on page 2

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

amplifier applications

ruggedness

half-bridge configuration amplifier

efficiency

STG

θJC

θCS

θJA

@ T

DSON

= 25°C

= 100°C

= 25°C

= 100°C

and Q

for better THD and lower EMI

for improved efficiency

for better THD and improved

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Parameter

@ 10V

DS(ON)

G(int)

max

typ.

typ. @ 10V

Key Parameters

Typ.

0.50

–––

IRFB4020PbF

10lb

-55 to + 175

in (1.1N

Max.

0.70

200

100

300

±20

Max.

1.43

–––

200

175

6.7

3.2

TO-220AB

Units

W/°C

°C/W

03/03/06

°C

Ω

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IRFB4020PBF Summary of contents

Page 1

... Notes through … are on page 2 www.irf.com typ. @ 10V DS(ON) Q typ typ typ. G(int) T max J G Parameter @ 10V GS @ 10V Parameter f f IRFB4020PbF Key Parameters 200 6.7 nC Ω 3.2 175 ° TO-220AB Max. Units 200 V ± 100 W 52 0.70 W/°C - 175 ° ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 8.0V 10 7.0V 6.0V 5.5V BOTTOM 5.0V 1 0.1 5.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 V DS ...

Page 4

175° 0.1 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T ...

Page 5

125°C 200 175 150 125 100 25° GS, Gate -to -Source Voltage (V) Fig 12. ...

Page 6

D.U 20V V GS 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit V DS D.U Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit ...

Page 7

Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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