IRLU8726PBF International Rectifier, IRLU8726PBF Datasheet - Page 7

• Manufacturer Part Number: IRLU8726PBF
• Description: MOSFET N-CH 30V 50A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8726PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2150pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Gate Charge Test Circuit
+
-
D.U.T
Fig 14.
20K
1K
ƒ
+
-
•
•
•
•
SD
•
•
•
S
DUT
-
„
G
L
+
+
-
VCC
Re-Applied
Voltage
Reverse
Recovery
Current
Id
Vgs
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
for HEXFET
Fig 16. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
IRLR/U8726PbF
Ripple ≤ 5%
Body Diode
Period
Qgodr
Body Diode Forward
®
Diode Recovery
Current
Power MOSFETs
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
Qgs2
P.W.
Vgs(th)
Vds
Qgs1
V
V
I
SD
GS
DD
=10V
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