IRF3205STRLPBF International Rectifier, IRF3205STRLPBF Datasheet

IRF3205STRLPBF

Manufacturer Part Number

IRF3205STRLPBF

Description

MOSFET N-CH 55V 110A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF3205LPBF.pdf (11 pages)

2.IRF3205STRLPBF.pdf (4 pages)

Specifications of IRF3205STRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8 mOhm @ 62A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

110A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

146nC @ 10V

Input Capacitance (ciss) @ Vds

3247pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

110 A

Gate Charge, Total

146 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

8 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

50 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

44 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.008Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Drain Current (max)

110A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

110 A

Mounting Style

SMD/SMT

Gate Charge Qg

97.3 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF3205STRLPBF
IRF3205STRLPBFTR

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Part Number

Manufacturer

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Price

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Current page: 1 of 11
Download datasheet (281Kb)

www.irf.com

Thermal Resistance

Description

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest power

capability and the lowest possible on-resistance in any existing surface

mount package. The D

because of its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF3205L) is available for low-profile

applications.

Absolute Maximum Ratings

dv/dt

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Junction-to-Case

Junction-to-Ambient (PCB mounted, steady-state)

Peak Diode Recovery dv/dt

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Power MOSFETs from International Rectifier

Pak is suitable for high current applications

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

IRF3205SPbF

IRF3205LPbF

IRF3205SPbF

HEXFET

10 lbf•in (1.1N•m)

-55 to + 175

Pak

Max.

390

200

± 20

110

1.3

5.0

…

Power MOSFET

DS(on)

Max.

0.75

IRF3205LPbF

DSS

= 110A

TO-262

= 8.0mΩ

= 55V

PD - 95106

Units

…

Units

°C/W

W/°C

V/ns

°C

03/11/04

Related parts for IRF3205STRLPBF

IRF3205STRLPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF3205S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 1000 ° ...

Page 4

IRF3205S/LPbF 6000 0V, C iss = SHORTED C rss = C gd 5000 C oss = 4000 Ciss 3000 2000 Coss 1000 Crss 0 ...

Page 5

LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 www.irf.com ...

Page 6

IRF3205S/LPbF D.U 20V 0.01 Ω Charge 6 500 15V 400 DRIVER 300 + - 200 100 ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

Page 8

IRF3205S/LPbF 2 Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

IRF3205S/LPbF 2 D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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