IRF6612 International Rectifier, IRF6612 Datasheet - Page 3

• Manufacturer Part Number: IRF6612
• Description: MOSFET N-CH 30V 24A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6612TR

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10000
1000
1000
100
100
0.1
10
10
1
1
0.1
0
V DS = 10V
≤60µs PULSE WIDTH
TOP
BOTTOM
Typical Transfer Characteristics
Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 150°C
1
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
2.7V
2
≤ 60µs PULSE WIDTH
Tj = 25°C
1
3
T J = 25°C
4
10
5
1000
100
1.5
1.0
0.5
10
1
0.1
-60 -40 -20
TOP
BOTTOM
I D = 25A
V GS = 10V
Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
Normalized On-Resistance
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
0
20
40
1
≤ 60µs PULSE WIDTH
Tj = 150°C
60 80 100 120 140 160
2.7V
3
10