IRF530NPBF International Rectifier, IRF530NPBF Datasheet

MOSFET N-CH 100V 17A TO-220AB

IRF530NPBF

Manufacturer Part Number
IRF530NPBF
Description
MOSFET N-CH 100V 17A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF530NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
17 A
Gate Charge, Total
37 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
70 W
Resistance, Drain To Source On
90 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
9.2 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Mounting Style
Through Hole
Gate Charge Qg
24.7 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF530NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF530NPBF
Manufacturer:
IR
Quantity:
10 400
Part Number:
IRF530NPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF530NPBF
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Company:
Part Number:
IRF530NPBF
Quantity:
15 000
Company:
Part Number:
IRF530NPBF
Quantity:
30 000
Part Number:
IRF530NPBF-M
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
IRF530NPbF
-55 to + 175
S
D
TO-220AB
Max.
0.47
± 20
9.0
7.0
7.4
17
12
60
70
®
R
Power MOSFET
V
DS(on)
Max.
2.15
–––
62
DSS
I
D
= 17A
= 100V
PD - 94962
= 90mΩ
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF530NPBF Summary of contents

Page 1

... R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 94962 IRF530NPbF ® HEXFET Power MOSFET 100V DSS R = 90mΩ DS(on 17A D S TO-220AB Max. Units 0.47 W/° ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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