IXTP42N25P IXYS, IXTP42N25P Datasheet - Page 5

MOSFET N-CH 250V 42A TO-220

IXTP42N25P

Manufacturer Part Number
IXTP42N25P
Description
MOSFET N-CH 250V 42A TO-220
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTP42N25P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
84 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.084 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
42
Rds(on), Max, Tj=25°c, (?)
0.084
Ciss, Typ, (pf)
2300
Qg, Typ, (nc)
70
Trr, Typ, (ns)
200
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP42N25P
Manufacturer:
MITSUBISHI
Quantity:
5 000
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
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