IXTP86N20T IXYS, IXTP86N20T Datasheet

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IXTP86N20T

Manufacturer Part Number
IXTP86N20T
Description
MOSFET N-CH 200V 86A TO-220
Manufacturer
IXYS
Datasheet

Specifications of IXTP86N20T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
29 mohm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
86
Rds(on), Max, Tj=25°c, (?)
0.029
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
90
Trr, Typ, (ns)
140
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
DM
D25
L
AS
GSS
DSS
L
J
JM
stg
SOLD
C
GS(th)
DSS
DGR
GSM
AS
D
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting
Mounting
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
GS
J
J
J
DS
GS
DS
≤ I
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C*
= 25°C, pulse width limited by T
=
=
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
25°C
25°C
DSS
, I
D
D
Force
= 250 μA
D
= 1 mA
Torque
= 0.5 I
G
DS
= 3.3 Ω
= 0 V
D25
GS
, Note 1
= 1 MΩ
(TO-263)
(TO-220, TO-3P)
DD
≤ V
T
J
= 125°C
DSS
IXTA 86N20T
IXTP 86N20T
IXTQ 86N20T
JM
TO-263
TO-220
TO-3P
200
Min.
3.0
10...65/2..5..15
Characteristic Values
-55 ... +175
-55 ... +175
1.13 / 10 Nm/ lb.in.
Maximum Ratings
Typ.
± 30
200
200
260
480
175
300
260
1.0
5.5
86
75
10
± 200
3
2
3
250
Max.
5.0
29
1
V/ns
N/lb.
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
g
g
g
V
V
J
TO-263 (IXTA)
TO-220 (IXTP)
TO-3P (IXTQ)
Features
Advantages
G = Gate
S = Source
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DSS
DS(on)
D
G
S
D
G
= 200
=
≤ ≤ ≤ ≤ ≤
S
S
D = Drain
TAB = Drain
86
29 mΩ Ω Ω Ω Ω
(TAB)
DS99664(08/06)
(TAB)
(TAB)
A
V

Related parts for IXTP86N20T

IXTP86N20T Summary of contents

Page 1

... ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXTA 86N20T IXTP 86N20T IXTQ 86N20T Maximum Ratings 200 = 1 MΩ 200 GS ± 260 JM 10 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +175 300 260 (TO-220, TO-3P) 1. Nm/ lb.in. ...

Page 2

... V R Pulse test, t ≤ 300 μs, duty cycle d ≤ Note 1: *: Current may be limited by externalterminal currnet limit. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25° ...

Page 3

... Drain Current 3.6 3 10V GS 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 120 I - Amperes D © 2006 IXYS All rights reserved 220 = 10V 200 8V 7V 180 160 140 120 6V 100 2.2 2.4 2.6 0 3.0 = 10V 2.8 8V 2.6 7V 2.4 2.2 2 ...

Page 4

... T = 125º 0.4 0.5 0.6 0.7 0.8 0 Volts SD Fig. 11. Capacitance 10,000 C iss 1,000 C oss 100 C rss MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 120 110 100 6 25º 1.1 1.2 1.3 0 1.00 ...

Page 5

... 100V 86A Ohms G Fig. 17. Resistive Turn-off Switching Times v s. Drain Current 25º 125º 3.3 Ω 100V 125º 25º Amperes D © 2006 IXYS All rights reserved 3.3Ω 15V 100V 105 115 125 20 Switching Times v s. Junction Temperature 43A d(off) ...

Page 6

... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXTA 86N20T TO-3P (IXTQ) Outline IXTP 86N20T IXTQ 86N20T ...

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