IRFP260 IXYS, IRFP260 Datasheet
IRFP260
Manufacturer Part Number
IRFP260
Description
MOSFET N-CH TO-247
Manufacturer
IXYS
Datasheet
1.IRFP260.pdf
(2 pages)
Specifications of IRFP260
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
46 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
45
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
230
Trr, Typ, (ns)
260
Pd, (w)
280
Rthjc, Max, (k/w)
0.45
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFP260X
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
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Manufacturer:
IR
Quantity:
12 500
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ROHM
Quantity:
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Part Number:
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Part Number:
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IR
Quantity:
10 280
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Quantity:
20 000
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
V
C
C
C
J
C
J
J
GS
DS
GS
DS
DS
GS
GS
150 C, R
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 200V
= 160V
= 0 V
= 10 V, I
I
DM
GS
, di/dt 100 A/ s, V
, I
D
D
DC
G
D
300 s, duty cycle d 2 %
= 250 A
= 250 A
= 2
, V
= 28 A
DS
= 0
GS
= 1 M
DD
T
T
J
J
= 125 C
= 25 C
V
(T
DSS
J
JM
,
= 25 C, unless otherwise specified)
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
IRFP 260
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
200
200
184
280
150
300
20
30
46
46
28
5
6
max.
0.055
100
250
25
4
V/ns
mJ
nA
W
C
C
C
C
V
V
V
V
A
A
A
V
V
A
A
g
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
• International standard package
• Low R
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Applications
• Switch-mode and resonant-mode
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
• Space savings
• High power density
D (cont)
JEDEC TO-247 AD
power supplies
(isolated mounting screw hole)
DSS
DS(on)
DS (on)
HDMOS
=
=
= 55 m
D = Drain,
TAB = Drain
200 V
TM
46 A
process
97545(1/98)
D (TAB)
1 - 2
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IRFP260 Summary of contents
Page 1
... GSS 200V DSS 160V DS(on Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 260 Maximum Ratings 200 = 1 M 200 184 DSS 280 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...
Page 2
... K/W Characteristic Values ( unless otherwise specified) J min. typ. max. 46 180 JM 1.8 = 100 V 260 590 R 2.34 7.2 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IRFP 260 TO-247 AD (IXTH) Outline ...