IRF5210LPBF International Rectifier, IRF5210LPBF Datasheet

IRF5210LPBF

Manufacturer Part Number

IRF5210LPBF

Description

MOSFET P-CH 100V 38A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF5210STRRPBF.pdf (10 pages)

2.IRF5210LPBF.pdf (3 pages)

Specifications of IRF5210LPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

60 mOhm @ 38A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

38A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

230nC @ 10V

Input Capacitance (ciss) @ Vds

2780pF @ 25V

Power - Max

3.1W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Channel Type

Current, Drain

-40 A

Gate Charge, Total

180 nC

Package Type

TO-262

Polarization

P-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

0.06 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

79 ns

Time, Turn-on Delay

17 ns

Transconductance, Forward

10 S

Voltage, Breakdown, Drain To Source

-100 V

Voltage, Drain To Source

–100 V

Voltage, Forward, Diode

-1.6 V

Voltage, Gate To Source

±20 V

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 40 A

Mounting Style

Through Hole

Gate Charge Qg

120 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF5210LPBF

Manufacturer:

International Rectifier

Quantity:

135

Current page: 1 of 10
Download datasheet (311Kb)

dv/dt

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Features of this design are a 150°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in a wide

variety of other applications.

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Some Parameters are Different from

IRF5210S/L

P-Channel

Lead-Free

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ -10V

Gate

IRF5210SPbF

Pak

300 (1.6mm from case )

Typ.

–––

-55 to + 150

Max.

-140

170

± 20

120

-7.4

Drain

-38

-24

3.1

1.3

-23

Max.

0.75

IRF5210LPbF

TO-262

Source

Units

W/°C

°C/W

V/ns

°C

Ω

Related parts for IRF5210LPBF

IRF5210LPBF Summary of contents

Page 1

... R Junction-to-Ambient (PCB Mount, steady state) θJA www.irf.com IRF5210SPbF G Gate Parameter @ -10V Parameter g D Ω Pak TO-262 IRF5210LPbF D S Drain Source Max. Units -38 A -24 -140 3.1 W 170 1.3 W/°C ± 120 mJ - -7.4 V/ns - 150 °C 300 (1.6mm from case ) Typ. Max. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V -8.0V -7.0V 100 -6.0V -5.5V -5.0V BOTTOM -4.5V 10 -4.5V 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) 1000 25°C 100 10 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Case Temperature (° 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 www.irf.com ...

Page 6

D.U DRIVER -20V 0.01 Ω (BR)DSS Charge 6 500 V DD 450 A 400 350 300 250 15V ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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