IXFA110N15T2 IXYS, IXFA110N15T2 Datasheet - Page 4

• Manufacturer Part Number: IXFA110N15T2
• Description: MOSFET N-CH 150V 110A D2PAK
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXFA110N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 480W
• Mounting Type: Surface Mount
• Package / Case: D2Pak, DPak, TO-220, TO-247, TO-252, TO-263
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.013
• Ciss, Typ, (pf): 8600
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 85
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
10
0
0
3.4
0.3
0
f
0.4
= 1 MHz
3.8
5
0.5
Fig. 9. Forward Voltage Drop of
4.2
10
T
0.6
Fig. 7. Input Admittance
J
= 150ºC
Fig. 11. Capacitance
0.7
Intrinsic Diode
4.6
15
V
GS
V
V
0.8
SD
DS
- Volts
5.0
- Volts
20
- Volts
T
J
0.9
= 150ºC
T
- 40ºC
J
25ºC
5.4
25
= 25ºC
1.0
C iss
C rss
C oss
1.1
5.8
30
1.2
6.2
35
1.3
6.6
1.4
40
1,000.0
100.0
10.0
180
160
140
120
100
1.0
0.1
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
1
0
Fig. 12. Forward-Bias Safe Operating Area
R
T
T
Single Pulse
V
I
I
J
C
DS(on)
D
G
DS
= 175ºC
= 25ºC
20
= 55A
= 10mA
20
= 75V
Limit
40
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
10
Q
60
60
G
- NanoCoulombs
I
D
V
DS
- Amperes
80
80
- Volts
100ms
T
IXFA110N15T2
IXFP110N15T2
100
J
100
= - 40ºC
100
150ºC
25ºC
120
120
25µs
100µs
1ms
10ms
IXYS REF: F_110N15T2(61)12-17-08
140
140
1000
160
160