IXTQ18N60P IXYS, IXTQ18N60P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ18N60P
Manufacturer Part Number
IXTQ18N60P
Description
MOSFET N-CH 600V 18A TO-3P
Specifications of IXTQ18N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
49
Trr, Typ, (ns)
500
Pd, (w)
360
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
, I
D
D
D
= 250 μA
= 250μA
= 0.5 I
G
DS
= 5 Ω
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
DSS
JM
IXTQ 18N60P
IXTV 18N60P
IXTV 18N60PS
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
360
150
300
260
1.0
18
54
18
30
10
6
4
±100
250
420
Max.
5.5
25
V/ns
mΩ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
V
I
R
TO-3P (IXTQ)
PLUS220 (IXTV)
Features
Advantages
PLUS220SMD (IXTV...S)
D25
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
D
D
G = Gate
S = Source
S
S
= 600
=
≤ ≤ ≤ ≤ ≤ 420 mΩ Ω Ω Ω Ω
G
S
18
TAB = Drain
D = Drain
DS99324E(03/06)
V
A
D (TAB)
D (TAB)
D (TAB)
Related parts for IXTQ18N60P
IXTQ18N60P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.0 ≤ DSS 360 -55 ... +150 150 -55 ...
... I = 18A, -di/dt = 100 A/μ 100V R PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...
... V = 10V Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved º C 3.1 2.8 7V 2.5 2.2 6V 1.9 1.6 5V 1.3 0.7 0 º 125 º ...
... T = 125 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5.5 6 6.5 10 º 0.8 0.9 1 1.1 100 C iss C oss 10 C rss IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Fig. 8. Transconductance º ...
... IXYS All rights reserved IXTV 18N60P IXTV 18N60PS Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXTQ 18N60P 1 10 ...
Related keywords
ixtq170n10p ixtq150n15p ixtq100n25p ixtq110n10p IXTQ18N60P datasheet IXTQ18N60P data sheet IXTQ18N60P pdf datasheet IXTQ18N60P component IXTQ18N60P part IXTQ18N60P distributor IXTQ18N60P RoHS IXTQ18N60P datasheet download
