IXTP160N085T IXYS, IXTP160N085T Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTP160N085T
Manufacturer Part Number
IXTP160N085T
Description
MOSFET N-CH 85V 160A TO-220
Specifications of IXTP160N085T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
164nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
160 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2005 IXYS All rights reserved
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
D25
DRMS
AR
GSS
DSS
J
JM
stg
L
DGR
GSM
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
T
External lead current limit
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 250 µA
= 1 mA
, V
= 50 A
G
= 10 Ω
DS
= 0
(TO-3P / TO-220)
GS
= 1 MΩ
Advance Technical Information
DD
T
≤ V
J
= 125°C
DSS
IXTQ 160N085T
IXTA 160N085T
IXTP 160N085T
,
JM
Min. Typ.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
5.0
1.13/10 Nm/lb.in.
±20
160
350
360
175
300
260
1.0
5.5
85
85
75
75
3
4
3
±200
250
Max.
4.0
6.0
25
V/ns
m Ω
°C
°C
°C
°C
°C
nA
µA
µA
W
V
V
V
A
A
A
A
g
g
g
V
V
J
TO-3P (IXTQ)
TO-220 (IXTP)
TO-263 (IXTA)
G = Gate
S = Source
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DSS
DS(on)
D
G
S
D
G
=
= 160
=
S
D = Drain
TAB = Drain
S
DS99347(02/05)
6.0 mΩ Ω Ω Ω Ω
85
(TAB)
(TAB)
(TAB)
V
A
Related parts for IXTP160N085T
IXTP160N085T Summary of contents
... GSS DSS DS DSS DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2005 IXYS All rights reserved Advance Technical Information IXTQ 160N085T IXTA 160N085T IXTP 160N085T Maximum Ratings MΩ ±20 160 75 350 JM 75 1.0 ≤ DSS 360 -55 ... +175 175 -55 ... +150 ...
... A, -di/dt = 100 A/µ TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. ...
... Value vs. Drain Current 2 175 2.4 J 2 10V GS 1.6 15V - - - - - 1.4 1 120 160 I - Amperes D © 2005 IXYS All rights reserved IXTA 160N085T ° C 320 280 6V 240 200 5V 160 120 0.7 0.8 0.9 1 ° C 2.4 2.2 6V 1.8 5V 1.6 1.4 1 ...
... T = 150 0.2 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 º 120 º º 150 C 100 4 º C 1.2 1.4 1.6 1.8 1000 C iss C oss ...
... Fig. 13. Maximum Transient Thermal Resistance 1.00 0.10 0.01 0.1 © 2005 IXYS All rights reserved IXTA 160N085T IXTP 160N085T ulse Width - m illiseconds IXTQ 160N085T 100 1000 ...
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