IXTH22N50P IXYS, IXTH22N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH22N50P
Manufacturer Part Number
IXTH22N50P
Description
MOSFET N-CH 500V 22A TO-247
Specifications of IXTH22N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
400
Pd, (w)
350
Rthjc, Max, (k/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
PLUS220 & PLUS220SMD
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
DC
D
= 250 μA
= 250μA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTH 22N50P
IXTQ 22N50P
IXTV 22N50P
IXTV 22N50PS
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
750
350
150
300
260
5.5
22
66
22
30
10
4
±10
Max.
5.5
50
270 mΩ
5
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
TO-247 (IXTH)
TO-3P (IXTQ)
PLUS220 (IXTV)
PLUS220SMD (IXTV...S)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
G
DS(on)
DSS
G
D
G = Gate
S = Source
D
D
S
G
S
S
S
≤ ≤ ≤ ≤ ≤ 270 mΩ Ω Ω Ω Ω
= 500
=
22
D = Drain
TAB = Drain
DS99351E(03/06)
(TAB)
D (TAB)
D (TAB)
(TAB)
A
V
Related parts for IXTH22N50P
IXTH22N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 750 ≤ DSS 350 -55 ...
... GS Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... Fig. 3. Output Characteristics º @ 125 10V Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3.1 2 10V GS 2.5 2.2 1.9 1.6 1 Amperes D © 2006 IXYS All rights reserved 3.1 2.8 2.5 2.2 6V 1.9 1.6 5V 1.3 1 0.7 0 º 125 º ...
... 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz C iss 1000 C oss 100 C rss Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 º 0.8 0.9 1 1.1 100 IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Fig. 8. Transconductance º ...
... PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 1 10 Pulse Width - milliseconds IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS 100 1000 PLUS220SMD (IXTV_S) Outline ...
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