IXTH36P10 IXYS, IXTH36P10 Datasheet
IXTH36P10
Manufacturer Part Number
IXTH36P10
Description
MOSFET P-CH 100V 36A TO-247
Manufacturer
IXYS
Datasheet
1.IXTH36P10.pdf
(2 pages)
Specifications of IXTH36P10
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 36 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-36
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
95
Trr, Typ, (ns)
180
Pd, (w)
180
Rthjc, Max, (k/w)
0.65
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH36P10
Manufacturer:
IXYS
Quantity:
18 000
P-Channel Enhancement Mode
Avalanche Rated
© 2002 IXYS All rights reserved
Standard Power MOSFET
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
Test Conditions
C
C
C
C
C
J
J
GS
GS
GS
GS
DS
DS
GS
D
D
DC
DSS
D
DS
GS
D25
Advance Technical Information
J
J
J
J
min.
Characteristic Values
IXTH 36P10
Maximum Ratings
typ.
max.
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
V
I
R
TO-247 AD
D25
DSS
DS(on)
DS (on)
= -100 V
= -36 A
=
75 m
TM
98908 (2/02)
D (TAB)
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IXTH36P10 Summary of contents
Page 1
... Weight Symbol Test Conditions V DSS GS(th GSS DSS DS DSS GS R DS(on © 2002 IXYS All rights reserved Advance Technical Information IXTH 36P10 Maximum Ratings GS J Characteristic Values J min. typ. max D25 V = -100 V DSS I = -36 A D25 = DS(on) TO-247 AD D (TAB) Features • ...
Page 2
... Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. DSS D D25 DSS D D25 Characteristic Values J min. typ. max. JM ...