IRF7464 International Rectifier, IRF7464 Datasheet - Page 2

• Manufacturer Part Number: IRF7464
• Description: MOSFET N-CH 200V 1.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7464

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7464

Diode Characteristics
IRF7464
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
V
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
(BR)DSS
JA
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
1.1
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.23
–––
––– 0.73
–––
–––
–––
–––
––– -100
–––
280
330
–––
–––
–––
130
9.5
2.5
4.6
9.5
11
18
15
52
14
25
48
60
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
5.5
3.8
6.9
1.3
25
14
2.3
90
10
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
Typ.
Typ.
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
MOSFET symbol
integral reverse
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 0.72A
= 0.72A
= 25°C, I
= 25°C, I
= 24
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V,
= 100V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 0.72A, V
= 0.72A
= 250µA
= 0.72A
= 0.72A
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
0.25
1.2
68
50
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
G
= 125°C
= 0V
Units
Units
°C/W
mJ
mJ
A
D
S