IXTQ130N15T IXYS, IXTQ130N15T Datasheet

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IXTQ130N15T

Manufacturer Part Number
IXTQ130N15T
Description
MOSFET N-CH 150V 130A TO-3P
Manufacturer
IXYS
Series
TrenchHV™r
Datasheet

Specifications of IXTQ130N15T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
113nC @ 10V
Input Capacitance (ciss) @ Vds
9800pF @ 25V
Power - Max
750W
Mounting Type
Through Hole
Package / Case
TO-3P
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
130
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
9800
Qg, Typ, (nc)
113
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
750
Rthjc, Max, (k/w)
0.20
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
DM
© 2007 IXYS CORPORATION, All rights reserved
D25
LRMS
AR
GSS
DSS
J
JM
stg
L
DGR
GSM
AS
GS(th)
DSS
D
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt ≤ 100 A/ms, V
GS
DSS
, I
D
D
= 250 μA
D
= 1 mA
= 0.5 I
G
DS
= 2.5 Ω
= 0 V
D25
, Notes 1, 2
GS
Preliminary Technical Information
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTH130N15T
IXTQ130N15T
JM
150
Min. Typ.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
10
± 30
150
150
130
330
750
175
300
260
1.2
5.5
75
± 200
5
3
6
250
Max.
4.5
12
5
V/ns
m Ω
°C
°C
°C
°C
°C
nA
μA
μA
W
V
V
V
A
A
A
A
g
g
V
V
J
Features
Advantages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
TO-247 (IXTH)
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
V
I
R
G = Gate
S = Source
D25
G
DSS
DS(on)
D
G
S
D
S
= 150
= 130
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
12 mΩ Ω Ω Ω Ω
DS99796 (02/07)
(TAB)
(TAB)
A
V

Related parts for IXTQ130N15T

IXTQ130N15T Summary of contents

Page 1

... V = ± GSS DSS DS DSS 0.5 I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH130N15T IXTQ130N15T Maximum Ratings 150 = 1 MΩ 150 GS ± 30 130 75 330 JM 5 1.2 ≤ DSS 750 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min ...

Page 2

... DSS D D25 31 0.25 Characteristic Values Min. Typ. JM 100 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH130N15T IXTQ130N15T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max 2.2 2. ...

Page 3

... Value 175º 25º 200 250 300 IXTH130N15T IXTQ130N15T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 130A D -50 - 100 T - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 160 140 120 100 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTH130N15T IXTQ130N15T Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge V = 75V 25A 10mA NanoCoulombs G Fig ...

Page 5

... T = 25º 125º 110 120 130 IXTH130N15T IXTQ130N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 2.5 Ω 15V 75V 125º 100 I - Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off) = 2.5 Ω 75V 65A 130A ...

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