IRF5210PBF International Rectifier, IRF5210PBF Datasheet - Page 3

• Manufacturer Part Number: IRF5210PBF
• Description: MOSFET P-CH 100V 40A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5210PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -40 A
• Gate Charge, Total: 180 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 79 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 10 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 40 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5210PBF

1000
1000
100
100
10
10
1
1
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
GS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
1
T = 25°C
J
7
-4.5V
V
40µs PULSE WIDTH
40µs PULSE WIDTH
T = 25°C
DS
c
= -50V
10
8
T = 175°C
J
9
100
10
A
A
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
0.1
TOP
BOTTOM - 4.5V
I
D
= -35A
T , Junction Temperature (°C)
-V
J
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
DS
0
, Drain-to-Source Voltage (V)
20
1
40
60
80 100 120 140 160 180
-4.5V
40µs PULSE WIDTH
T = 175°C
C
10
V
GS
= -10V
100
A
A