IRF8010PBF International Rectifier, IRF8010PBF Datasheet

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... Mounting torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes  † through are on page 8 www.irf.com IRF8010PbF SMPS MOSFET HEXFET V DSS 100V @ 10V GS @ 10V 175 300 (1.6mm from case ) 1.1(10) Typ. ––– 0.50 – ...

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... IRF8010PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

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... Fig 2. Typical Output Characteristics 3 175°C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12.0 14.0 16.0 -60 -40 Fig 4. Normalized On-Resistance IRF8010PbF VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V 4.0V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 80A = ...

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... IRF8010PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.0 0.5 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 80A iss 6 C oss 4 C rss ...

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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec) 1 IRF8010PbF + - ≤ 1 ≤ 0 d(off thJC C 0 ...

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... IRF8010PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 600 15V 500 DRIVER 400 + 300 200 100 Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

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... Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRF8010PbF + - V =10V ...

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... IRF8010PbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...