IXTH130N15T IXYS, IXTH130N15T Datasheet - Page 2

• Manufacturer Part Number: IXTH130N15T
• Description: MOSFET N-CH 150V 130A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH130N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9800
• Qg, Typ, (nc): 113
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 750
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents:
SM
d(on)
d(off)
S
r
f
Notes: 1.
rr
fs
J
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;
location must be 5 mm or less from the package body.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 50 A, -di/dt = 100 A/μs
= 25 V, V
= 2.5 Ω (External)
= 10 V; I
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
D
DS
GS
DS
DS
= 60 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
DS(on)
= 0.5 I
Kelvin test contact
5,049,961
5,063,307
5,187,117
D25
D25
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
60
Characteristic Values
9800
1450
0.25
Typ.
Typ.
100
320
113
100
23
16
57
27
32
31
6,162,665
6,259,123 B1
6,306,728 B1
0.20 °C/W
Max.
Max.
130
330
1.2
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
TO-247AD Outline
Pins: 1 - Gate
TO-3P (IXTQ) Outline
6,683,344
6,710,405 B2
6,710,463
Terminals: 1 - Gate
3 - Source
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
6,727,585
6,759,692
6,771,478 B2
4.7
2.2
2.2
1.0
Millimeter
1
3 - Source
.4
IXTQ130N15T
IXTH130N15T
2 - Drain
4, TAB - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.140
.170
.819
.610
.780
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216