IXTQ74N20P IXYS, IXTQ74N20P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ74N20P
Manufacturer Part Number
IXTQ74N20P
Description
MOSFET N-CH 200V 74A TO-3P
Specifications of IXTQ74N20P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
34 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.034 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
74 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
74
Rds(on), Max, Tj=25°c, (?)
0.034
Ciss, Typ, (pf)
3300
Qg, Typ, (nc)
107
Trr, Typ, (ns)
160
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
IXTQ 74N20P
IXTT 74N20P
DSS
JM
,
200
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 20
± 30
200
200
200
480
175
300
260
1.0
5.5
5.0
74
60
40
10
±100
250
Max.
5.0
25
34
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
TO-3P (IXTQ)
TO-268 (IXTT)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
V
I
R
D25
D
DS(on)
DSS
S
G
S
D = Drain
TAB = Drain
= 200
= 74
≤ ≤ ≤ ≤ ≤ 34
DS99119E(12/05)
D (TAB)
mΩ Ω Ω Ω Ω
(TAB)
A
V
Related parts for IXTQ74N20P
IXTQ74N20P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 74N20P IXTT 74N20P Maximum Ratings 200 = 1 MΩ 200 GS ± 20 ± 200 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 30 ...
... D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 5 4.5 4 3 15V GS 1 100 120 140 160 180 200 I - Amperes D © 2006 IXYS All rights reserved C 200 180 160 140 120 100 2 2.6 2.2 7V 1 0.6 4 ...
... T = 150º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 25ºC 1 1.2 1.4 1000 C iss 100 C oss 10 C rss IXTQ 74N20P IXTT 74N20P Fig. 8. Transconductance ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXTQ 74N20P IXTT 74N20P 100 1000 ...
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