IXTQ110N10P IXYS, IXTQ110N10P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTQ110N10P
Manufacturer Part Number
IXTQ110N10P
Description
MOSFET N-CH 100V 110A TO-3P
Specifications of IXTQ110N10P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3550pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.015
Ciss, Typ, (pf)
3550
Qg, Typ, (nc)
110
Trr, Typ, (ns)
130
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
© 2006 IXYS All rights reserved
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTQ 110N10P
IXTT 110N10P
JM
,
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
100
100
±20
±30
110
250
480
175
300
260
1.0
5.5
5.0
75
60
40
10
±100
250
Max.
5.0
25
15
V/ns
m Ω
mJ
° C
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
V
I
TO-3P (IXTQ)
TO-268 (IXTT)
R
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
D25
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
S
G
≤ ≤ ≤ ≤ ≤
= 100
= 110
S
D = Drain
TAB = Drain
15
DS99132E(12/05)
mΩ Ω Ω Ω Ω
D (TAB)
A
V
(TAB)
Related parts for IXTQ110N10P
IXTQ110N10P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ 110N10P IXTT 110N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 110 75 250 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +150 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 30 ...
... DS(on) Value vs. Drain Current 3 2.8 2.6 2.4 2.2 2 1.8 V 1.6 1 15V GS 1.2 1 0.8 0 100 125 150 175 200 225 250 I - Amperes D © 2006 IXYS All rights reserved C 220 200 180 160 140 8V 120 100 1.2 1.4 1.6 1 2.4 2.2 2 1 ...
... T = 150 º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 70 º º º 150 1.4 1.6 1.8 2 1000 C iss 100 ...
... © 2006 IXYS All rights reserved illis IXTQ 110N10P IXTT 110N10P ...
Related keywords
ixtq170n10p ixtq150n15p ixtq100n25p ixtq110n10p IXTQ110N10P datasheet IXTQ110N10P data sheet IXTQ110N10P pdf datasheet IXTQ110N10P component IXTQ110N10P part IXTQ110N10P distributor IXTQ110N10P RoHS IXTQ110N10P datasheet download
