IXTV96N25T IXYS, IXTV96N25T Datasheet - Page 5

• Manufacturer Part Number: IXTV96N25T
• Description: MOSFET N-CH 250V 96A PLUS220
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTV96N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: PLUS-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 96 A
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 96
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 6100
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 158
• Trr, Max, (ns): -
• Pd, (w): 625
• Rthjc, Max, (k/w): 0.20
• Package Style: PLUS220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
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22
20
18
16
14
12
10
32
30
28
26
24
22
20
18
16
24
22
20
18
16
14
12
10
45
2
25
t
T
V
Switching Times vs. Gate Resistance
50
r
Switching Times vs. Drain Current
J
DS
35
3
= 125ºC, V
Rise Time vs. Junction Temperature
= 125V
55
Fig. 17. Resistive Turn-off
T
Fig. 15. Resistive Turn-on
T
T
45
T
J
J
J
4
J
= 125ºC
= 125ºC
= 25ºC
60
Fig. 13. Resistive Turn-on
= 25ºC
t
d(on)
GS
I
D
55
T
I
65
= 15V
D
= 48A
5
J
- - - -
- Amperes
R
- Degrees Centigrade
G
70
65
- Ohms
6
75
t
R
V
I
f
75
DS
G
D
= 2.5 Ω , V
I
= 96A
= 125V
7
D
80
= 48A, 96A
85
85
t
8
d(off)
GS
95
90
= 15V
- - - -
R
V
V
9
GS
DS
G
105
95
= 2.5 Ω
= 15V
= 125V
100
10
115
26
25
24
23
22
21
20
19
68
66
64
62
60
58
56
54
52
125
34
32
30
28
26
24
22
20
18
16
14
70
60
50
40
30
20
10
24
22
20
18
16
14
12
10
25
Switching Times vs. Junction Temperature
45
2
Switching Times vs. Gate Resistance
t
T
V
35
f
J
DS
I
50
D
= 125ºC, V
R
V
V
3
= 48A, 96A
G
GS
DS
= 125V
= 2.5 Ω
= 15V
= 125V
45
Fig. 18. Resistive Turn-off
55
Fig. 16. Resistive Turn-off
T
Rise Time vs. Drain Current
4
J
t
Fig. 14. Resistive Turn-on
d(off)
55
- Degrees Centigrade
IXTH96N25T IXTQ96N25T
60
GS
I
D
= 15V
- - - -
R
= 48A
5
65
G
65
I
D
- Ohms
- Amperes
75
6
t
R
V
70
f
G
DS
= 2.5 Ω , V
= 125V
85
I
75
D
7
= 96A
95
t
80
d(off)
GS
T
IXYS REF: T_96N25T (7W) 08-10-07
T
8
J
J
IXTV96N25T
= 125ºC
= 15V
105
= 25ºC
- - - -
85
9
115
90
125
10
95
160
140
120
100
80
60
40
72
70
68
66
64
62
60
58
56
54
52
100