IRFP2907PBF International Rectifier, IRFP2907PBF Datasheet

MOSFET N-CH 75V 209A TO-247AC

IRFP2907PBF

Manufacturer Part Number
IRFP2907PBF
Description
MOSFET N-CH 75V 209A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP2907PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 125A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
209A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
620nC @ 10V
Input Capacitance (ciss) @ Vds
13000pF @ 25V
Power - Max
470W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 m Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
209 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
130 ns
Gate Charge Qg
410 nC
Minimum Operating Temperature
- 55 C
Rise Time
190 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP2907PBF

Available stocks

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Quantity
Price
Part Number:
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Quantity:
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Quantity:
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Description
This Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
Typical Applications
Absolute Maximum Ratings
Thermal Resistance
Benefits
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Telecom applications requiring soft start
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
®
Power MOSFETs
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.24
–––
–––
IRFP2907PbF
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
TO-247AC
S
D
209†
148†
Max.
1970
840
470
± 20
3.1
5.0
®
R
Power MOSFET
DS(on)
V
I
Max.
0.32
D
–––
40
DSS
= 209A†
= 4.5mΩ
= 75V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
A
V
1

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IRFP2907PBF Summary of contents

Page 1

... Mounting Torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G ® Power MOSFETs @ 10V GS @ 10V GS IRFP2907PbF ® HEXFET Power MOSFET 75V DSS R = 4.5mΩ DS(on 209A† TO-247AC Max. Units 209† 148† 840 470 3 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

0V MHZ C iss = rss = C gd 16000 C oss = Ciss 12000 8000 4000 Coss Crss ...

Page 5

LIMITED BY PACKAGE 200 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 2000 TOP Single Pulse BOTTOM 10% Duty Cycle 125A 1600 1200 800 400 ...

Page 8

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent For N-channel 8 + • • ƒ • - „ - • • • P.W. Period D ...

Page 9

EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" embly line pos ition indicates "Lead-Free" TO-247AC package is not ...

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