IRL1404PBF International Rectifier, IRL1404PBF Datasheet
IRL1404PBF
Specifications of IRL1404PBF
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IRL1404PBF Summary of contents
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Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free l Description ® Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V 4.3V 100 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...
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1MHz iss rss 8000 oss iss 6000 4000 C oss 2000 C ...
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LIMITED BY PACKAGE 120 100 125 ° Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE ...
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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...
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D.U.T + - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...
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EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE AS S EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified ...