IRFB4228PBF International Rectifier, IRFB4228PBF Datasheet

MOSFET N-CH 150V 83A TO-220AB

IRFB4228PBF

Manufacturer Part Number
IRFB4228PBF
Description
MOSFET N-CH 150V 83A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4228PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
4530pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
Continuous Drain Current Id
33A
Threshold Voltage Vgs Typ
5V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
83 A
Power Dissipation
330 W
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4228PBF
Manufacturer:
IR
Quantity:
12 500
Description
Notes  through … are on page 8
Features
l
l
l
l
l
l
l
l
www.irf.com
V
I
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
175°C Operating Junction Temperature for
D
D
DM
RP
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
J
STG
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Parameter
Parameter
f
g
MOSFET
GS
GS
PULSE
PDP SWITCH
@ 10V
@ 10V
V
V
R
I
T
RP
DS
DS (Avalanche)
J
DS(ON)
G
max
max @ T
min
Gate
G
typ. @ 10V
typ.
C
Typ.
0.50
= 100°C
–––
–––
Key Parameters
10lb
S
D
-40 to + 175
IRFB4228PbF
x
in (1.1N
Max.
330
170
330
170
300
±30
2.2
83
59
Drain
D
x
m)
MOSFET
Max.
0.45
–––
62
150
180
170
175
12
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
W
V
A
N
m
°C
G
V
V
A
D
S
1
09/14/07

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IRFB4228PBF Summary of contents

Page 1

... Notes  through … are on page 8 www.irf.com PDP SWITCH V min (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4228PbF Key Parameters 150 typ. 180 100°C 170 C 175 TO-220AB D S Drain Source MOSFET Max. Units ± 330 170 330 W 170 2 ...

Page 2

... IRFB4228PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... Fig 4. Normalized On-Resistance vs. Temperature 120 110 100 Fig 6. Typical E IRFB4228PbF TOP BOTTOM 5.0V ≤ 60µs PULSE WIDTH Tj = 175°C 0 100 Drain-to-Source Voltage ( 50A 10V -60 -40 - 100120140160180 Junction Temperature (° 220nH C = Variable 100°C 25° ...

Page 4

... IRFB4228PbF 140 L = 220nH 120 100 C = 0.3µ 0.2µ 0.1µ 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 100 Junction Temperature (°C) Fig 11 ...

Page 5

... R 1 τ J τ J τ τ 1 τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFB4228PbF I D TOP 13A 20A BOTTOM 50A 50 75 100 125 150 Starting Junction Temperature (°C) ton= 1µs Duty cycle = 0.25 Half Sine Wave Square Pulse 50 75 100 ...

Page 6

... IRFB4228PbF D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 20a. Gate Charge Test Circuit ...

Page 7

... DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms PULSE Fig 22b. Switching Time Waveforms IRFB4228PbF t ST Fig 21b. t Test Waveforms d(on) r d(off ...

Page 8

... IRFB4228PbF TO-220AB packages are not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.096mH 25Ω ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ measured approximately 90°C. θ J … ...

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