IXTH3N120 IXYS, IXTH3N120 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH3N120
Manufacturer Part Number
IXTH3N120
Description
MOSFET N-CH 1200V 3A TO-247
Specifications of IXTH3N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
3
Rds(on), Max, Tj=25°c, (?)
4.5
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
39
Trr, Typ, (ns)
700
Pd, (w)
100
Rthjc, Max, (k/w)
0.8
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
High Voltage
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
DSS
DS(on)
DSS
d
Test Conditions
V
V
V
V
V
V
Note 1
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
J
J
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
, di/dt 100 A/ s, V
, I
D
D
DSS
DC
D
= 1 mA
= 250 A
, V
= 0.5 I
G
= 2
DS
= 0
D25
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
= 25 C
DSS
= 125 C
,
JM
3N120
3N110
3N120
3N110
IXTH 3N120
1200
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1100
1200
1100
150
150
300
700
12
20
30
20
3
3
5
6
100
max.
4.5
25
4.5
1
V/ns
mJ
mJ
mA
W
nA
C
C
C
C
V
V
V
V
V
V
V
V
A
A
A
g
A
V
I
V
TO-247
G = Gate
S = Source
Features
Advantages
D25
International standard packages
Low R
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
DS (on)
S
TAB = Drain
D
= 1200 V
=
= 4.5
= Drain
DS99025(03/03)
D (TAB)
3 A
Related parts for IXTH3N120
IXTH3N120 Summary of contents
... I = 250 A GS(th GSS 0.8 V DSS DS DSS 0.5 I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXTH 3N120 Maximum Ratings 3N120 1200 3N110 1100 = 1 M 1200 3N120 GS 3N110 1100 700 DSS 150 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in. 6 ...
... -di/dt = 100 Notes: 1. Pulse test, t 300 s, duty cycle d IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , Note 1 1.5 2.2 ...
... Drain Current DS(on) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Degrees C C Fig. 5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 4.0 3.5 3.0 6V 2.5 2.0 1.5 1.0 5V 0.5 0.0 = 25°C j 2.8 2.5 2.2 1.9 1.6 1.3 1 ...
... V - Volts SD Fig. 9 Drain Current vs Drain to Source Voltage 1.00 0.10 0.01 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1000 100 0.8 1 Pulse Width - Seconds Fig ...
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