IXFC52N30P IXYS, IXFC52N30P Datasheet

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IXFC52N30P

Manufacturer Part Number
IXFC52N30P
Description
MOSFET N-CH 300V 24A ISOPLUS220
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFC52N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
100
Rthjc, Max, (ºc/w)
1.25
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHT
MOSFET HiPerFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting force
V
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
Power
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 4mA
= 26A, Note 1
DS
DSS
= 0V
, T
J
GS
≤ 150°C
TM
= 1MΩ
t = 1min
t = 1s
T
J
JM
= 125°C
IXFC52N30P
11..66 / 2.5..14.6
-55 ... +150
-55 ... +150
300
2.5
Maximum Ratings
Characteristic Values
Min.
2500
3000
300
300
±20
±30
150
100
150
300
260
24
52
10
2
Typ.
1
±100 nA
Max.
5.0
25 μA
75 mΩ
1 mA
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
ISOPLUS 220
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Avanlache rated
Fast intrinsic diode
Easy to mount
Space savings
High power density
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
DS(on)
DSS
G
D
S
E153432
≤ ≤ ≤ ≤ ≤ 75mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
= 300V
= 24A
TM
D = Drain
Isolated Tab
DS99246F(5/08)

Related parts for IXFC52N30P

IXFC52N30P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS 10V 26A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFC52N30P TM Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 24 150 ≤ 150° 100 -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 3000 11..66 / 2.5..14.6 2 Characteristic Values Min ...

Page 2

... I = 26A 25 DSS D 53 0.21 Characteristic Values Min. Typ. JM 800 7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFC52N30P ISOPLUS220 TM (IXFC) Outline Max Note: nC Bottom heatsink (Pin electrically isolated from Pin 1, 1.25 °C/W °C/W Max 150 A 1.5 ...

Page 3

... Amperes D © 2008 IXYS CORPORATION, All rights reserved 3.0 3.5 4.0 4.5 5 Volts = 26A Value 125º 25ºC J 100 125 150 IXFC52N30P Fig. 2. Extended Output Characteristics @ 25ºC 150 V = 10V GS 9V 125 100 Volts D S Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2 ...

Page 4

... Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions. 6.5 7.0 7.5 8 25ºC J 1.1 1.2 1.3 1.4 C iss C oss C rss Volts IXFC52N30P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 150V 26A 10m A ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 1 10 Pulse Width - milliseconds IXFC52N30P 100 1000 IXYS REF: T_52N30P (6S)6-13-06-C ...

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