IXFA3N120 IXYS, IXFA3N120 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFA3N120
Manufacturer Part Number
IXFA3N120
Description
MOSFET N-CH 1200V 3A TO-263
Specifications of IXFA3N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 1.5mA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
3
Rds(on), Max, Tj=25°c, (?)
4.5
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
39
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DM
DSS
D25
AR
GS(th)
J
JM
stg
L
DSS
DS(on)
DGR
GSM
AR
AS
DSS
GS
D
d
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
S
GS
DS
GS
DS
GS
GS
J
J
C
C
C
C
J
C
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 1 mA
= 1.5 mA
, V
= 0.5 I
G
= 4.7 Ω
DS
g
, High dv/dt
= 0
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
= 25°C
= 125°C
DSS
,
JM
IXFP 3N120
IXFA 3N120
1200
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1200
200
150
300
±20
±30
700
12
20
10
3
3
4
2
±100
max.
5.0
4.5
50
2
V/ns
mJ
mJ
mA
°C
°C
°C
°C
nA
µA
W
V
V
Ω
V
V
V
V
A
A
A
g
g
Features
Advantages
V
I
R
t
TO-220 (IXFP)
TO-263 (IXFA)
G = Gate
S = Source
D25
rr
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
Switching (UIS)
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 300 ns
DS (on)
G
=1200 V
=
=
D S
G
TAB = Drain
D
4.5 Ω Ω Ω Ω Ω
S
= Drain
DS99036B(07/04)
3 A
D (TAB)
D (TAB)
Related parts for IXFA3N120
IXFA3N120 Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFA 3N120 IXFP 3N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±20 ± 700 ≤ DSS 200 -55 to +150 150 -55 to +150 300 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg 2 0 Volts DS Fig Normalized to I DS(on) Value vs Amperes D © 2004 IXYS All rights reserved D25 D º º IXFA 3N120 IXFP 3N120 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) D25 Junction Temperature 2 ...
... Fig. 9. Source Current vs. Source-To-Drain Voltage º 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 1 0000 iss 1 000 C oss rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 5.5 6 6.5 º 0.8 0 IXFA 3N120 IXFP 3N120 Fig ransconductance 8 7 º - º º 4 ...
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