IXFT86N30T IXYS, IXFT86N30T Datasheet - Page 2

• Manufacturer Part Number: IXFT86N30T
• Description: MOSFET N-CH 300V 86A D2PAK
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFT86N30T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 43 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 830W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.043
• Ciss, Typ, (pf): 11300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= I
= 43A, -di/dt = 100A/μs,
= 100V, V
= 10V, V
= 3.3Ω (External)
= 0V
= 10V, I
= 0V, V
= 10V, V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
DS
D
GS
DS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
70
Min.
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
11.3
0.21
Typ.
720
180
460
115
Typ.
8.5
87
16
18
54
15
48
50
0.15 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
340
150
Max.
1.5
86
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXFT) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
IXFH86N30T
IXFT86N30T
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216