IXTH150N17T IXYS, IXTH150N17T Datasheet - Page 3

• Manufacturer Part Number: IXTH150N17T
• Description: MOSFET N-CH 175V 150A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH150N17T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 175V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 175
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 9800
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): 120
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
160
140
120
100
160
140
120
100
80
60
40
20
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
V
0.5
0.2
GS
= 10V
40
1.0
15V
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
- - - -
1.5
80
0.6
vs. Drain Current
Normalized to I
2.0
V
I
0.8
D
DS
V
120
@ 150ºC
- Amperes
@ 25ºC
DS
- Volts
2.5
- Volts
V
1.0
GS
V
160
= 10V
GS
3.0
8V
7V
1.2
= 10V
8V
7V
6V
5V
3.5
D
200
= 75A Value
1.4
6V
5V
4.0
T
T
J
J
1.6
= 175ºC
= 25ºC
240
4.5
1.8
280
5.0
325
300
275
250
225
200
175
150
125
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
75
50
25
90
80
70
60
50
40
30
20
10
0
0
-50
-50
0
V
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
GS
V
Fig. 2. Extended Output Characteristics
External Lead Current Limit
-25
GS
-25
= 10V
2
8V
= 10V
0
0
DS(on)
vs. Junction Temperature
4
5V
7V
6V
T
C
T
25
- Degrees Centigrade
25
J
Normalized to I
- Degrees Centigrade
6
V
DS
50
@ 25ºC
50
- Volts
IXTH150N17T
I
D
8
= 150A
75
75
10
100
100
D
= 75A Value
I
12
D
125
125
= 75A
14
150
150
175
175
16