IXFC16N80P IXYS, IXFC16N80P Datasheet
IXFC16N80P
Manufacturer Part Number
IXFC16N80P
Description
MOSFET N-CH 800V 9A ISOPLUS220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFC16N80P.pdf
(2 pages)
Specifications of IXFC16N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
71nC @ 10V
Input Capacitance (ciss) @ Vds
4600pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
9
Rds(on), Max, Tj=25°c, (?)
0.65
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
70
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
138
Rthjc, Max, (ºc/w)
0.9
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
ISOL
C
GS(th)
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Continuous
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
D
= 250 µA
= 4 mA
G
TM
= I
DS
= 5 Ω
T,
= 0 V
(Note 1)
GS
= 1 MΩ
Advance Technical Information
DD
T
J
≤ V
= 125° C
DSS
JM
IXFC 16N80P
,
800
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
± 30
± 40
800
800
150
150
300
260
1.5
48
30
10
9
8
2
±100
250
650
Max.
5.0
25
V/ns
N/lb
V~
mΩ
mJ
nA
°C
°C
°C
°C
°C
µA
µA
W
V
V
V
V
A
A
A
V
V
g
J
ISOPLUS220
G = Gate
S = Source
Features
Applications
Advantages
Silicon chip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
V
I
R
t
substrate
G
D25
rr
DS(on)
DSS
D
S
DS (on)
E153432
HDMOS
TM
≤ ≤ ≤ ≤ ≤ 650 mΩ Ω Ω Ω Ω
= 800
=
≤ ≤ ≤ ≤ ≤ 250
(IXFC)
D = Drain
Isolated back surface
TM
process
9
DS99604E(07/06)
ns
A
V
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IXFC16N80P Summary of contents
Page 1
... GSS DSS DS DSS (Note 1) DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved Advance Technical Information IXFC 16N80P Maximum Ratings 800 = 1 MΩ 800 GS ± 30 ± 1.5 ≤ DSS 150 -55 ... +150 150 -55 ... +150 300 ...
Page 2
... The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ...