IXFT120N15P IXYS, IXFT120N15P Datasheet - Page 5

• Manufacturer Part Number: IXFT120N15P
• Description: MOSFET N-CH 150V 120A TO-268
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFT120N15P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 600W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.016
• Ciss, Typ, (pf): 4900
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 600
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFH 120N15P
IXFT 120N15P
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