IXFT96N20P IXYS, IXFT96N20P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFT96N20P
Manufacturer Part Number
IXFT96N20P
Description
MOSFET N-CH 200V 96A TO-268
Specifications of IXFT96N20P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
96A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
600W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
96 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
96
Rds(on), Max, Tj=25°c, (?)
0.024
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
145
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting torque
TO-220
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
HiPerFET
DSS
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
(TO-247)
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
JM
,
IXFH 96N20P
IXFT 96N20P
IXFV 96N20P
200
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
200
200
±20
±30
225
600
175
300
260
1.5
96
75
60
50
10
4
6
5
±100
250
Max.
5.0
25
24
V/ns
m Ω
mJ
µA
µA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-247 (IXFH)
PLUS220 (IXFV)
Features
l
l
l
l
Advantages
l
l
l
TO-268 (IXFT)
V
I
R
t
D25
rr
Fast Intrinsic Diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G = Gate
S = Source
G
D
D
G
S
S
= 200
=
S
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200 ns
96
24 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99222E(02/06)
(TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFT96N20P
IXFT96N20P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 96N20P IXFT 96N20P IXFV 96N20P Maximum Ratings 200 = 1 MΩ 200 GS ±20 ± 225 1.5 ≤ DSS 600 -55 ... +175 175 -55 ...
... A/µ 100 PLUS220 (IXFV) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. ...
... V = 10V GS 3.7 3 175ºC J 3.1 2.8 2.5 2 125ºC J 1.9 1 100 125 150 175 200 225 250 mperes D © 2006 IXYS All rights reserved C 250 225 200 175 150 125 100 2 2.8 2.6 2.4 8V 2.2 2 1.8 7V 1.6 1 ...
... T = 150º 25º 0.4 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z 1000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions 7 1.2 1.4 1.6 1000 100 C oss 10 C rss IXFH 96N20P IXFT 96N20P IXFV 96N20P Fig ...
... Fig. 13. M axim um Trans ie nt The tance 1.00 0.10 0.01 1 © 2006 IXYS All rights reserved IXFH 96N20P IXFT 96N20P 10 Pulse Width - Milliseconds IXFV 96N20P 100 1000 ...
Related keywords
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