IRLS3034-7PPBF International Rectifier, IRLS3034-7PPBF Datasheet - Page 3

• Manufacturer Part Number: IRLS3034-7PPBF
• Description: MOSFET N-CH 40V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLS3034-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10990pF @ 40V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 380 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
100000
10000
10000
1000
1000
1000
100
100
0.1
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
0.1
1
TOP
BOTTOM
T J = 175°C
C rss
2.5V
C oss
V DS , Drain-to-Source Voltage (V)
C iss
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
1
T J = 25°C
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
≤60µs PULSE WIDTH
3
10
10
4
100
100
5
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
10000
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
5.0
4.0
3.0
2.0
1.0
0.0
10
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 200A
V GS = 10V
I D = 170A
V DS , Drain-to-Source Voltage (V)
25
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
50
1
2.5V
V DS = 32V
V DS = 20V
75
≤ 60µs PULSE WIDTH
Tj = 175°C
100
10
125
100
150
3