IXFX360N10T IXYS, IXFX360N10T Datasheet - Page 3

• Manufacturer Part Number: IXFX360N10T
• Description: MOSFET N-CH 100V 360A PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™ HiPerFET™r

Specifications of IXFX360N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 5V @ 3mA
• Gate Charge (qg) @ Vgs: 525nC @ 10V
• Input Capacitance (ciss) @ Vds: 33000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0029
• Ciss, Typ, (pf): 33000
• Qg, Typ, (nc): 525
• Trr, Typ, (ns): -
• Trr, Max, (ns): 130
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2011 IXYS CORPORATION, All Rights Reserved
360
300
240
180
120
360
300
240
180
120
3.0
2.6
2.2
1.8
1.4
1.0
0.6
60
60
0
0
0.0
0.0
0
V
GS
0.1
0.2
40
= 10V
Fig. 5. Normalized R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.2
0.4
80
0.3
0.6
120
0.4
0.8
I
V
V
160
V
D
GS
DS
DS
- Amperes
V
= 15V
0.5
- Volts
1.0
- Volts
DS(on)
GS
10V
8V
7V
= 15V
200
10V
8V
7V
vs. Drain Current
0.6
1.2
T
T
6V
5V
4V
J
J
240
= 175ºC
= 25ºC
0.7
1.4
J
J
6V
5.5V
5V
4V
= 150ºC
= 25ºC
280
0.8
1.6
320
0.9
1.8
360
1.0
2.0
180
160
140
120
100
400
350
300
250
200
150
100
2.6
2.2
1.8
1.4
1.0
0.6
0.2
80
60
40
20
50
0
0
-50
0.0
-50
V
V
Fig. 2. Extended Output Characteristics @ T
GS
GS
-25
= 15V
= 10V
-25
10V
Fig. 4. R
Fig. 6. Drain Current vs. Case Temperature
8V
0.5
0
0
External Lead Current Limit
1.0
DS(on)
7V
vs. Junction Temperature
T
25
5.5V
5V
4V
6V
C
25
T
- Degrees Centigrade
J
Normalized to I
- Degrees Centigrade
50
1.5
V
50
DS
- Volts
75
75
2.0
100
IXFK360N10T
IXFX360N10T
D
100
= 180A Value
I
D
2.5
= 360A
125
125
I
D
= 180A
J
150
3.0
= 25ºC
150
175
3.5
175