IXFT6N100Q IXYS, IXFT6N100Q Datasheet
IXFT6N100Q
Manufacturer Part Number
IXFT6N100Q
Description
MOSFET N-CH 1000V 6A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH6N100Q.pdf
(2 pages)
Specifications of IXFT6N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 2.5mA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
180W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
2.0
Ciss, Typ, (pf)
2200
Qg, Typ, (nc)
48
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
66
Rthjc, Max, (ºc/w)
1.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 1999 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
J
J
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 V
= 0 V
= 10 V, I
I
150 C, R
TM
DM
, di/dt 100 A/ s, V
GS
, I
D
D
DSS
DC
D
= 1 mA
= 2.5 mA
, V
G
= 0.5 I
300 s, duty cycle d
= 2
DS
g
, High dv/dt
= 0
D25
GS
JM
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C
= 125 C
= 25 C, unless otherwise specified)
DSS
,
2 %
1000
min.
2.0
IXFH 6N100Q
IXFT 6N100Q
-55 ... +150
-55 ... +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1000
1000
180
150
700
300
24
20
20
30
6
6
5
6
4
100
max.
4.5
1.9
50
1
V/ns
mJ
mJ
mA
W
nA
C
C
C
C
V
V
V
V
A
A
A
g
g
V
V
A
G = Gate
S = Source
Features
Advantages
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
V
I
R
t
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
250 ns
DS (on)
G
=
=
= 1000 V
S
TAB = Drain
D
g
= Drain
1.9
process
98561A (6/99)
6 A
(TAB)
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IXFT6N100Q Summary of contents
Page 1
... GSS 0.8 V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 1999 IXYS All rights reserved IXFH 6N100Q IXFT 6N100Q Maximum Ratings 1000 = 1 M 1000 700 DSS 180 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values ( unless otherwise specified) J min ...
Page 2
... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 3 5 2200 180 30 ...