IXTH20N50D IXYS, IXTH20N50D Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH20N50D
Manufacturer Part Number
IXTH20N50D
Description
MOSFET N-CH 500V 20A TO-247
Specifications of IXTH20N50D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
330 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3.5V @ 250mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.33 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vds, Max, (v)
500
Id(on), Min, (a)
20
Rds(on), Max, (?)
0.33
Vgs(off), Max, (v)
-3.5
Ciss, Typ, (pf)
6300
Crss, Typ, (pf)
82
Qg, Typ, (nc)
78.5
Pd, (w)
400
Rthjc, Max, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
High Voltage
MOSFET
N-Channel
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
M
Weight
© 2006 IXYS All rights reserved
Symbol
V
V
I
I
R
I
DM
D25
GSS
DSX(off)
D(on)
J
JM
stg
L
ISOL
GSM
DSX
DGX
GS
D
GS(off)
d
DSX
DS(on)
V
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6 mm (0.063 in) from case for 10 seconds
Plastic case for 10 seconds
Mounting torque
TO-247
TO-268
V
V
V
V
V
V
Test Conditions
,
J
J
C
C
C
GS
GS
DS
GS
DS
GS
GS
Depletion Mode
= 25°C to 150°C
= 25°C to 150°C
= 25°C
= 25°C; pulse width limited by T
= 25°C
= -10 V, I
= 25 V, I
= ± 30 V
= V
= -10 V
= 10 V, I
= 0 V, V
DSS
D
D
DC
DS
D
= 250 mA
= 10 A
, V
= 25 V
= 250 mA
DS
= 0
Note 1
Note 1
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXTH 20N50D
IXTT 20N50D
JM
500
-1.5
min.
-55 ... + 150
-55 ... + 150
Characteristic Values
1.13/10
Maximum Ratings
± 30
± 40
150
500
500
400
1.5
typ.
300
20
50
300
6
4
± 100
0.33
-3.5
500
Nm/lb.in.
max.
25
°C
°C
°C
°C
°C
W
nA
μA
μA
V
V
V
V
A
A
g
g
A
V
V
Ω
TO-268 (IXTT)
G = Gate
S = Source
Features
Applications
TO-247 (IXFH)
Level shifting
Triggers
Solid State Relays
Current Regulators
Active load
Normally ON Mode
Molding epoxies meet UL 94 V-0
International standard packages
flammability classification
V
I
R
D25
DSS
DS(on)
G
G
D
S
S
D
TAB = Drain
=
=
= 0.33 Ω Ω Ω Ω Ω
= Drain
500 V
99192(01/06)
D (TAB)
20 A
(TAB)
Related parts for IXTH20N50D
IXTH20N50D Summary of contents
... GSS DSX(off) DS DSS DS(on D(on © 2006 IXYS All rights reserved IXTH 20N50D IXTT 20N50D Maximum Ratings 500 500 ± 30 ± 400 -55 ... + 150 150 -55 ... + 150 300 300 1.13/10 Nm/lb.in Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 500 -1 ...
... I = 20A, -di/dt = 100 A/μ - Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... olts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 2.8 2.6 2.4 2 10V GS 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved - º - 125º 25º IXTH 20N50D IXTT 20N50D Fig . 2. Exte acte r is tics º ...
... olts S D Fig. 11. Gate Charge 250V 10A 10mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions 25ºC J 0.8 0.9 1 100 120 140 IXTH 20N50D IXTT 20N50D Fig. 8. Trans conductance 30V -40º 25ºC 125º Amperes D Fig. 10 nde nce of Bre ak dow n and Thr e s hole V oltage rature 1 ...
... Fig . 13 -Bias Safe atin 100 R Lim it D S(on 150º 25º 100 Fig. 14. Maximum Transient Thermal Resistance 1.00 0.10 0.01 0.1 1 © 2006 IXYS All rights reserved 25μs 100μ 10m 1000 - V olts 10 Pulse Width - milliseconds IXTH 20N50D IXTT 20N50D 100 1000 ...
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