IXFK32N80P IXYS, IXFK32N80P Datasheet
IXFK32N80P
Manufacturer Part Number
IXFK32N80P
Description
MOSFET N-CH 800V 32A TO-264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFX32N80P.pdf
(4 pages)
Specifications of IXFK32N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
830 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
830
Rthjc, Max, (ºc/w)
0.15
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK32N80P
Manufacturer:
IXYS
Quantity:
200
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
© 2006 IXYS All rights reserved
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-264)
TO-264
V
S
PLUS247
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 8 mA
= 250 µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFK 32N80P
IXFX 32N80P
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
800
800
±30
±40
830
150
300
260
2.0
32
70
16
50
10
10
6
±200
1000
270
Max.
5.0
25
V/ns
m Ω
°C
mJ
nA
µA
µA
° C
° C
°C
°C
W
g
g
V
V
V
V
V
V
A
A
A
J
G = Gate
S = Source
Features
l
l
l
l
Advantages
l
l
l
PLUS247 (IXFX)
V
TO-264 (IXFK)
R
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
I
D25
DSS
DS(on)
t
rr
G
D
S
D
Tab = Drain
= 800
=
≤ ≤ ≤ ≤ ≤ 270 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250 ns
= Drain
32
DS99425E(01/06)
(TAB)
(TAB)
A
V
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IXFK32N80P Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFK 32N80P IXFX 32N80P Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 2.0 ≤ DSS 830 -55 ... +150 150 -55 ... +150 300 260 1 ...
Page 2
... A/µ 100V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min. Typ. Max. , pulse test ...
Page 3
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 Amperes D © 2006 IXYS All rights reserved C 70 10V 3.1 2.8 7V 2.5 6V 2.2 1.9 1.6 1.3 5V 1.0 0.7 0 º 125 C 30 ...
Page 4
... T = 125 0.3 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 4 º 0.8 0.9 1 1.1 1.2 1.00 C iss C oss 0. 0. IXFK 32N80P IXFX 32N80P Fig. 8. Transconductance º ...