IXTJ36N20 IXYS, IXTJ36N20 Datasheet
IXTJ36N20
Manufacturer Part Number
IXTJ36N20
Description
MOSFET N-CH 200V 36A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXTJ36N20.pdf
(2 pages)
Specifications of IXTJ36N20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
2970pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.07
Ciss, Typ, (pf)
2970
Qg, Typ, (nc)
106
Trr, Typ, (ns)
200
Pd, (w)
300
Rthjc, Max, (k/w)
0.65
Package Style
TO-268 (I3 - PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
Test Conditions
S
J
J
C
C
C
J
C
GS
DS
GS
DS
GS
GS
DM
TM
GS
D
D
DC
D
DSS
G
DS
GS
DD
J
J
ADVANCE TECHNICAL INFORMATION
J
DSS
JM
min.
Characteristic Values
Maximum Ratings
IXTJ 36N20
typ.
max.
G = Gate,
S = Source,
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
V
I
R
t
D25
rr
DSS
DS(on)
G
DS (on)
< 200 ns
D
S
= 200
=
=
D = Drain,
TAB = Drain
36
70 m
TM
98859 9/01
V
A
(TAB)
é
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IXTJ36N20 Summary of contents
Page 1
... stg M d Weight Symbol Test Conditions V DSS GS(th GSS DSS DS DSS GS R DS(on © 2001 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION IXTJ 36N20 Maximum Ratings DSS Characteristic Values J min. typ. max 200 V DSS D25 DS(on) t < 200 é S (TAB Gate, ...
Page 2
... Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 Characteristic Values J min. typ. max. DSS D D25 DSS D D25 Characteristic Values J min. typ. max ...