IXTK80N25 IXYS, IXTK80N25 Datasheet - Page 4

• Manufacturer Part Number: IXTK80N25
• Description: MOSFET N-CH 250V 80A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK80N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.033 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): 6000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 300
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
140
120
100
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
0
0
0.4
4
0
Fig. 9. Source Current vs . Source-To-
f = 1MHz
4.5
5
T
T
J
J
0.6
Fig. 11. Capacitance
= 125ºC
= 125ºC
Fig. 7. Input Adm ittance
-40ºC
10
25ºC
5
Drain Voltage
V
V
15
0.8
V
G S
S D
5.5
D S
- Volts
- Volts
20
- Volts
T
J
6
= 25ºC
1
25
C iss
C oss
C rss
6.5
30
1.2
7
35
7.5
1.4
40
1000
100
90
80
70
60
50
40
30
20
10
10
10
0
1
9
8
7
6
5
4
3
2
1
0
0
1
0
T
R
T
J
DS
C
= -40ºC
V
I
I
125ºC
20
= 25ºC
(on)
D
G
DS
Fig. 8. Transconductance
25ºC
= 40A
= 10mA
Fig. 12. Forw ard Bias Safe
Limit
= 125V
50
Fig. 10. Gate Charge
40
Q
Operating Area
10
G
60
I
- nanoCoulombs
V
D
100
- Amperes
D S
80
- Volts
DC
IXTK 80N25
150
100
1ms
100
120
25µs
200
140
1000
160
250