IXTC75N10 IXYS, IXTC75N10 Datasheet
IXTC75N10
Manufacturer Part Number
IXTC75N10
Description
MOSFET N-CH 100V 72A ISOPLUS220
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTC75N10.pdf
(2 pages)
Specifications of IXTC75N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 37.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
300
Pd, (w)
230
Rthjc, Max, (k/w)
0.54
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
J
JM
stg
DGR
GS
GSM
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
C
C
C
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
GS
TM
, I
D
D
DC
FET
D
= 250 µA
= 250 µA
DSS
, V
= I
T
DS
= 0
GS
ADVANCE TECHNICAL INFORMATION
= 1 MΩ
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
JM
min.
100
Characteristic Values
IXTC 75N10
2
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
100
100
±20
±30
300
230
150
300
72
0.020
2
max.
±100
200
4
1
mA
µA
° C
° C
° C
° C
nA
W
Ω
V
V
V
V
A
A
V
V
g
Features
Applications
Advantages
See IXTH75N10 data sheet for
characteristic curves
ISOPLUS220
G = Gate
S = Source
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
V
I
R
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
TM
= 100
=
=
D = Drain
Isolated back surface*
72
20 mΩ Ω Ω Ω Ω
TM
DS98881A(7/03)
process
A
V
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IXTC75N10 Summary of contents
Page 1
... 0.8 • V DSS DS DSS DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION IXTC 75N10 Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 72 300 JM 230 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 2 300 Characteristic Values (T = 25° ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ Note 37.5A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 25 ...