IXFK88N20Q IXYS, IXFK88N20Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFK88N20Q
Manufacturer Part Number
IXFK88N20Q
Description
MOSFET N-CH 200V 88A TO-264
Specifications of IXFK88N20Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
146nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
88 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.028
Ciss, Typ, (pf)
5250
Qg, Typ, (nc)
149
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
JM
L
J
stg
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
C
C
C
C
C
C
J
J
J
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V DC, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
DSS
, di/dt
, I
D
D
D
= 250 uA
= 4 mA
300 s, duty cycle d
= 0.5 • I
G
100 A/ s, V
= 2
DS
= 0
D25
GS
= 1 M
DD
T
T
(T
J
J
J
= 25 C
= 125 C
g
V
= 25 C, unless otherwise specified)
DSS
TO-247
TO-264
TO-247, PLUS 247
TO-264
JM
,
2 %
IXFH 88N20Q
IXFK 88N20Q
IXFX 88N20Q
min.
200
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
0.9/6 Nm/lb.in.
200
200
352
500
150
300
2.5
30
40
88
88
50
20
10
6
max.
100
4.0
25
30 m
1 mA
V/ns
mJ
nA
W
C
C
C
C
V
V
A
A
A
V
V
g
A
g
V
V
J
TO-247 AD (IXFH)
TO-264 AA (IXFK)
PLUS 247
G = Gate
S = Source
Features
Advantages
Low gate charge
International standard packages
classification
Low R
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
V
I
R
t
Epoxy meet UL 94 V-0, flammability
Easy to mount
Space savings
High power density
rr
D25
DSS
DS(on)
DS (on)
TM
G
(IXFX)
G
HDMOS
D
= 200
=
=
D
S
200 ns
TAB = Drain
88 A
30 m
TM
DS98969A(03/03)
process
D (TAB)
V
D (TAB)
D (TAB)
Related parts for IXFK88N20Q
IXFK88N20Q Summary of contents
... GS(th DC GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q g Maximum Ratings 200 = 1 M 200 352 2 DSS 500 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. TO-264 ...
... I = 25A -di/dt = 100 PLUS 247 (IXFX) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 88N20Q IXFK 88N20Q Characteristic Values ( unless otherwise specified) J min. typ. max. ...
... Volts DS Fig Norm alized to I DS(on) Value vs 2.8 GS 2.5 2 25º 0 Amperes D © 2003 IXYS All rights reserved IXFH 88N20Q IXFK 88N20Q 6V 5V 2 D25 25º IXFX 88N20Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Norm alized to I Value vs. ...
... Fig. 11. Capacitance 1 0000 iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 4,850,072 4,931,844 IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q Fig ...
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