IXTH14N80 IXYS, IXTH14N80 Datasheet

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IXTH14N80

Manufacturer Part Number
IXTH14N80
Description
MOSFET N-CH 800V 14A TO-247
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTH14N80

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.7
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
145
Trr, Typ, (ns)
800
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH14N80
Manufacturer:
IXYS
Quantity:
35 500
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
Max. lead temperature for soldering 300
1.6 mm (0.063 in) from case for 10 s
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
GSS
D25
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 3 mA
= 250 A
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
min.
800
Characteristic Values
2
IXTH 14N80
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
800
800
300
150
20
30
14
56
C
6
max.
100
250
4.5
0.7
1
mA
nA
W
V
V
V
V
A
A
V
V
g
C
C
C
A
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
V
I
R
D25
International standard package
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor control
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= 800 V
= 14 A
= 0.70
HDMOS
D = Drain,
TAB = Drain
TM
process
96518F(12/97)
D (TAB)
1 - 4

Related parts for IXTH14N80

IXTH14N80 Summary of contents

Page 1

... 0.8 • V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH 14N80 Maximum Ratings 800 = 1 M 800 300 -55 ... +150 150 -55 ... +150 C 1.13/10 Nm/lb.in. ...

Page 2

... DSS D D25 55 0.42 0.25 Characteristic Values ( unless otherwise specified) J min. typ 100 V 800 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 14N80 TO-247 AD Outline max Terminals Gate ...

Page 3

... 1.2 1.0 0 Amperes D Figure 5. Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved O C Figure 2. Output Characteristics at 125 value vs. I Figure 4. R D25 D 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1 Figure 6. Admittance Curves 100 125 150 ...

Page 4

... V - Volts SD Figure 11. Transient Thermal Resistance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 5000 2500 1000 500 250 100 200 250 1.0 1.2 1 Duty Cycle 0.001 ...

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