IXFH7N80 IXYS, IXFH7N80 Datasheet
IXFH7N80
Manufacturer Part Number
IXFH7N80
Description
MOSFET N-CH 800V 7A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH7N80.pdf
(4 pages)
Specifications of IXFH7N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 2.5mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
7
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH7N80
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH7N80
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 3 mA
DSS
= 2.5 mA
G
, V
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
min.
800
Characteristic Values
IXFH 7 N80
IXFM 7 N80
2
-55 ... +150
-55 ... +150
1.13/10
Maximum Ratings
typ.
800
800
±20
±30
180
150
300
28
18
7
7
5
max.
±100
250
4.5
1.4
Nm/lb.in.
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
V
V
V
V
A
A
A
V
V
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• Space savings
• High power density
V
I
R
t
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
D (cont)
rr
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
DSS
DS(on)
DS (on)
HDMOS
= 800 V
= 7 A
= 1.4 W
= 250 ns
D
D = Drain,
TAB = Drain
TM
G
process
91527F(7/97)
(TAB)
1 - 4
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IXFH7N80 Summary of contents
Page 1
... V DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 7 N80 IXFM 7 N80 TM Family Maximum Ratings 800 = 1 MW 800 GS ±20 ± ...
Page 2
... 125° 25°C 0 125°C 1 25°C 7 125°C 9.0 J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 TO-247 AD (IXFH) Outline 100 ns 110 ns 200 ns 100 ns 130 nC Dim. Millimeter Min. Max. ...
Page 3
... GS 2 2.0 1 Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved 15V 8 10 7N80 75 100 125 150 IXFH 7N80 IXFM 7N80 Fig. 2 Input Admittance 25° 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7 Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2 ...
Page 4
... Volts CE Fig.11 Transient Thermal Impedance 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 0.001 0.01 Time - Seconds IXFH 7N80 IXFM 7N80 Fig.8 Forward Bias Safe Operating Area 10 Limited by R DS(on ...